Si4916DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P DM
0.1
0.05
t 1
t 2
1. Duty Cycle, D =
t 1
t 2
0.02
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74331 .
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
9
相关PDF资料
SI4920DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4932DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC
SI4933DY-T1-GE3 MOSFET P-CH DUAL 12V 8-SOIC
SI4936CDY-T1-E3 MOSFET 2N-CH 30V 5.8A SO8
SI4940DY-T1-GE3 MOSFET N-CH DUAL 40V 8-SOIC
SI4943BDY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
SI4943CDY-T1-E3 MOSFET P-CH D-S 20V 8-SOIC
SI4946BEY-T1-GE3 MOSFET N-CH D-S 60V 8-SOIC
相关代理商/技术参数
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